Please use this identifier to cite or link to this item:
|Title:||Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2 films|
|Authors:||Choi, W.K. |
|Source:||Choi, W.K.,Ng, V.,Ho, Y.W.,Chen, T.B.,Ho, V. (2001). Factors affecting Ge nanocrystal size in co-sputtered Ge+SiO2 films. Materials Research Society Symposium - Proceedings 638 : F1411-F1416. ScholarBank@NUS Repository.|
|Abstract:||The high resolution transmission electron microscopy and Raman spectroscopy results of germanium nanocrystals embedded in SiO2 synthesized by rapid thermal processing (RTA) have been presented. From the results of samples with different Ge concentrations, it was concluded that there is a narrow window in the Ge concentration that can produce nanocrystals. We also showed that it is possible to vary RTA duration or temperature to produce Ge nanocrystals with varying sizes. Our results therefore suggest that it is possible to utilize (i) annealing duration and; (ii) temperature to tune crystal sizes for optoelectronic applications.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 10, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.