Please use this identifier to cite or link to this item:
|Title:||Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing|
|Citation:||Wang, G.H.,Toh, E.-H.,Tung, C.-H.,Foo, Y.-L.,Tripathy, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2007). Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing. Materials Research Society Symposium Proceedings 994 : 245-250. ScholarBank@NUS Repository.|
|Abstract:||A novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported. A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content. A systematic study of the stress developed in the SiGe layer as condensation takes place is presented. A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs. © 2007 Materials Research Society.|
|Source Title:||Materials Research Society Symposium Proceedings|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 8, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.