Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83727
Title: Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing
Authors: Wang, G.H.
Toh, E.-H.
Tung, C.-H.
Foo, Y.-L.
Tripathy, S.
Lo, G.-Q.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Wang, G.H.,Toh, E.-H.,Tung, C.-H.,Foo, Y.-L.,Tripathy, S.,Lo, G.-Q.,Samudra, G.,Yeo, Y.-C. (2007). Fabrication of strain relaxed silicon-germanium-on-insulator (Si 0.35Ge0.65OI) wafers using cyclical thermal oxidation and annealing. Materials Research Society Symposium Proceedings 994 : 245-250. ScholarBank@NUS Repository.
Abstract: A novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported. A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content. A systematic study of the stress developed in the SiGe layer as condensation takes place is presented. A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs. © 2007 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83727
ISBN: 9781558999541
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

19
checked on Feb 17, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.