Please use this identifier to cite or link to this item: https://doi.org/10.1109/SNW.2010.5562594
Title: Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction
Authors: Han, G. 
Yee, Y.S.
Guo, P.
Yang, Y.
Fan, L.
Zhan, C.
Yeo, Y.-C. 
Issue Date: 2010
Source: Han, G.,Yee, Y.S.,Guo, P.,Yang, Y.,Fan, L.,Zhan, C.,Yeo, Y.-C. (2010). Enhancement of TFET performance using Dopant Profile-Steepening Implant and source dopant concentration engineering at tunneling junction. 2010 Silicon Nanoelectronics Workshop, SNW 2010 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/SNW.2010.5562594
Abstract: All-Silicon Tunneling Field Effect Transistors (TFETs) with relatively high Ion values were fabricated by inserting an N+ pocket between source and channel to achieve sharpening or steepening of the source dopant profile. The source-side pocket or Dopant Profile Steepening Implant (DPSI) can be tuned to engineer the junction abruptness, boost the lateral electric field at the tunnel region, and reduce the tunneling width for I on enhancement. By designing the DPSI dose and energy, we demonstrate that further enhancement in Ion values can be achieved.
Source Title: 2010 Silicon Nanoelectronics Workshop, SNW 2010
URI: http://scholarbank.nus.edu.sg/handle/10635/83706
ISBN: 9781424477272
DOI: 10.1109/SNW.2010.5562594
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