Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2012.6479143
Title: Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
Authors: Wang, W.J.
Loke, D.
Law, L.T.
Shi, L.P.
Zhao, R.
Li, M.H.
Chen, L.L.
Yang, H.X.
Yeo, Y.C. 
Adeyeye, A.O. 
Chong, T.C.
Lacaita, A.L.
Issue Date: 2012
Citation: Wang, W.J.,Loke, D.,Law, L.T.,Shi, L.P.,Zhao, R.,Li, M.H.,Chen, L.L.,Yang, H.X.,Yeo, Y.C.,Adeyeye, A.O.,Chong, T.C.,Lacaita, A.L. (2012). Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities. Technical Digest - International Electron Devices Meeting, IEDM : 31.3.1-31.3.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2012.6479143
Abstract: Phase-change memory (PCM) represents one of the best candidates for a 'universal memory'. However, its slow SET speed, high RESET power, and high resistance drift present key challenges towards this ambition. Here, grain-engineered Ge2Sb2Te5 is exploited to control the crystallization kinetics, and electrical properties of PCM. We report 120 % higher SET speeds with respect to conventional scaling. Good stability (140 °C), 30 % RESET power reduction, and 2X lower resistance drift were also achieved. A 4-state/2-bit multilevel cell was further demonstrated. This provides a route to making high-density PCM devices. © 2012 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83696
ISBN: 9781467348706
ISSN: 01631918
DOI: 10.1109/IEDM.2012.6479143
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