Please use this identifier to cite or link to this item:
|Title:||Efficient spin injection and spin filtering in semiconductors by utilizing the k3-Dresselhaus spin-orbit effect|
|Authors:||Fujita, T. |
|Citation:||Fujita, T., Jalil, M.B.A., Tan, S.G. (2008-11). Efficient spin injection and spin filtering in semiconductors by utilizing the k3-Dresselhaus spin-orbit effect. IEEE Transactions on Magnetics 44 (11 PART 2) : 2643-2646. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2008.2003043|
|Abstract:||We numerically study the spin-dependent transmission characteristic of conduction electrons across a semiconductor-based trilayer structure with k 3-Dresselhaus spin-orbit coupling, where the Fermi level of electrons exceeds the electrostatic barrier height. Unlike previous studies which focus on the tunneling regime, the electron transmission across our structure is high, thereby ensuring that the polarization can be utilized in a practical device. The polarization is studied for two barrier materials, GaSb and InSb, which both show a considerable polarization amplitude attainable within realistic modeling values. We finally propose two interesting spintronic device concepts based on our structure and its unique polarization characteristics; a sensitive, gate-tunable spin filter and a novel spin transistor device. © 2008 IEEE.|
|Source Title:||IEEE Transactions on Magnetics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 12, 2019
WEB OF SCIENCETM
checked on Jan 2, 2019
checked on Oct 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.