Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83682
Title: Effects of O2 and Ar reactive ion etching on the field emission properties of aligned CuO nanowire films
Authors: Zhu, Y.W. 
Teo, C.H.
Xu, X.J. 
Yu, T. 
Lim, C.T. 
Ong, C.K. 
Thong, J.T.L. 
Sow, C.H. 
Keywords: CuO
Field emission
Nanowires
Reactive ion etching (RIE)
Issue Date: 2007
Source: Zhu, Y.W.,Teo, C.H.,Xu, X.J.,Yu, T.,Lim, C.T.,Ong, C.K.,Thong, J.T.L.,Sow, C.H. (2007). Effects of O2 and Ar reactive ion etching on the field emission properties of aligned CuO nanowire films. Diffusion and Defect Data Pt.B: Solid State Phenomena 121-123 (PART 2) : 793-796. ScholarBank@NUS Repository.
Abstract: The effects of oxygen (O2) reactive ion etching (RIE) on the field emission (FE) properties of aligned CuO nanowire films are investigated systematically. It is found that the FE performance of the films is largely enhanced after initial exposure to reactive oxygen ions but degrades after extended treatment. As comparison, Ar RIE is also used to treat CuO nanowires, which, however, results in the deterioration of FE properties. The enhanced FE after O2 RIE is attributed to the shaper morphology, cleaner surface and better conductivity. On the other hand, increased work function and non-crystallized surface structure cause the deterioration of FE of CuO nanowires after Ar RIE treatments.
Source Title: Diffusion and Defect Data Pt.B: Solid State Phenomena
URI: http://scholarbank.nus.edu.sg/handle/10635/83682
ISBN: 3908451302
ISSN: 10120394
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

42
checked on Mar 10, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.