Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0040-6090(02)00900-8
Title: Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices
Authors: Qin, L.
Shen, Z.X. 
Teo, K.L. 
Peng, C.S.
Zhou, J.M.
Tung, C.H.
Tang, S.H. 
Keywords: Germanium
Hydrostatic-pressure
Phonon
Quantum-dots
Resonance
Superlattices
Issue Date: 22-Jan-2003
Citation: Qin, L., Shen, Z.X., Teo, K.L., Peng, C.S., Zhou, J.M., Tung, C.H., Tang, S.H. (2003-01-22). Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices. Thin Solid Films 424 (1) : 23-27. ScholarBank@NUS Repository. https://doi.org/10.1016/S0040-6090(02)00900-8
Abstract: Self-organized Ge/Si quantum dots (QD's) in strained Si/Ge short-period superlattices are studied by Raman scattering under hydrostatic pressure excited in-resonance and off-resonance with the confined Ge-like E1 transition of Ge using 488 and 514.5 nm lines from an argon-ion laser and 632.8 nm line from a He-Ne laser. The Raman spectra of Ge-Ge, Si-Ge and Si-2TA modes of the QD's were obtained as a function of pressure in the range of 1-70 kbar. Our results show that the mode Grüneisen parameter of the Ge-Ge phonon mode in QD's is found to be γ = 0.81 ± 0.01, which is smaller than that of the bulk Ge. We observe resonance effects with the confined Ge-like E1 transition and the pressure coefficient of this resonating electronic transition obtained is ∼5 ± 1 meV kbar-1. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83678
ISSN: 00406090
DOI: 10.1016/S0040-6090(02)00900-8
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