Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1855205
Title: Effects of buffer layer on the electronic properties of half-metallic Fe 3O 4
Authors: Jain, S. 
Adeyeye, A.O. 
Boothroyd, C.B.
Issue Date: 15-May-2005
Citation: Jain, S., Adeyeye, A.O., Boothroyd, C.B. (2005-05-15). Effects of buffer layer on the electronic properties of half-metallic Fe 3O 4. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1855205
Abstract: We have investigated in a systematic way the effect of buffer layer materials on the metal-insulator transition and also on the I-V characteristics of half-metallic Fe3 O4 films. Using an electron-beam deposition technique, we have grown 150 nm of Fe3 O4 films directly on Si(001) substrate, on 20-nm Fe2 O3 and 20-nm Si O2 buffer layers. We observed that for a fixed Fe3 O4 film thickness, the metal-insulator transition is strongly dependent on the buffer layer materials. From the I-V characteristics, we observed an insulator-like gap structure in the density of states below the transition temperature which disappears gradually with increasing temperature. © 2005 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/83676
ISSN: 00218979
DOI: 10.1063/1.1855205
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