Please use this identifier to cite or link to this item:
|Title:||Effects of buffer layer on the electronic properties of half-metallic Fe 3O 4|
|Authors:||Jain, S. |
|Citation:||Jain, S., Adeyeye, A.O., Boothroyd, C.B. (2005-05-15). Effects of buffer layer on the electronic properties of half-metallic Fe 3O 4. Journal of Applied Physics 97 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1855205|
|Abstract:||We have investigated in a systematic way the effect of buffer layer materials on the metal-insulator transition and also on the I-V characteristics of half-metallic Fe3 O4 films. Using an electron-beam deposition technique, we have grown 150 nm of Fe3 O4 films directly on Si(001) substrate, on 20-nm Fe2 O3 and 20-nm Si O2 buffer layers. We observed that for a fixed Fe3 O4 film thickness, the metal-insulator transition is strongly dependent on the buffer layer materials. From the I-V characteristics, we observed an insulator-like gap structure in the density of states below the transition temperature which disappears gradually with increasing temperature. © 2005 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 18, 2018
WEB OF SCIENCETM
checked on Oct 2, 2018
checked on Oct 12, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.