Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2006.306123
Title: Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate
Authors: Yu, X.
Yu, M.
Zhu, C. 
Issue Date: 2007
Source: Yu, X.,Yu, M.,Zhu, C. (2007). Effective suppression of fermi level pinning in poly-Si/HfO2 gate stack by using poly-SiGe gate. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 149-151. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2006.306123
Abstract: In this work, we have demonstrated that the Fermi level pinning in poly-Si/HfO2 can be effectively suppressed by using poly-SiGe gate. Threshold voltage of -1.02 V in poly-Si/HfO2 PFET was tuned to -0.81 V in poly-Si/Al2O3/HfO2, and further reduced to -0.49 V in poly-Si/poly-SiGe/Al2O3/HfO2. At the same time, Vth, of 0.3 V for NFET was achieved in this poly-SiGe gate stack. Moreover, Vuth stability was remarkably improved by using poly-SiGe gate and Al2O3 capping layer. The improvements shown in this poly-SiGe gate stack could be due to the suppressed formation of oxygen vacancies. © 2006 IEEE.
Source Title: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83675
ISBN: 1424401615
DOI: 10.1109/ICSICT.2006.306123
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