Please use this identifier to cite or link to this item: https://doi.org/10.1109/IRPS.2010.5488674
Title: Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric
Authors: Liu, B.
Lim, P.S.Y.
Yeo, Y.-C. 
Keywords: Ge
High-κ
NBTI
P-FET
Strain
Wafer bending
Issue Date: 2010
Source: Liu, B., Lim, P.S.Y., Yeo, Y.-C. (2010). Effect of strain on negative bias temperature instability of germanium p-channel field-effect transistor with high-κ gate dielectric. IEEE International Reliability Physics Symposium Proceedings : 1055-1057. ScholarBank@NUS Repository. https://doi.org/10.1109/IRPS.2010.5488674
Abstract: We report the first investigation of the effect of strain on NBTI of Germanium (Ge) p-channel Field Effect Transistors (p-FETs) with high-κ; gate dielectric. In this study, a mechanical wafer bending tool was used to alter strain in the Ge channel. It is found that higher longitudinal tensile strain in the channel of Ge p-FETs leads to worse NBTI performance. By reducing the tensile strain in the longitudinal direction by wafer bending, improvement in drive current and reduction of NBTI degradation are achieved. Gate width WG dependence of NBTI in Ge p-MOSFET is also reported. © 2010 IEEE.
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83674
ISBN: 9781424454310
ISSN: 15417026
DOI: 10.1109/IRPS.2010.5488674
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