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|Title:||Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy|
|Authors:||Liu, H.F. |
|Citation:||Liu, H.F., Xiang, N., Chua, S.J., Tripathy, S. (2006-02-02). Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy. Journal of Crystal Growth 288 (1) : 44-48. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.045|
|Abstract:||High-resolution X-ray diffraction (HRXRD) and micro-Raman scattering probe have been used to study the effect of post-growth thermal annealing on GaNAs thin films grown on (0 0 1) GaAs substrates by solid-source molecular beam epitaxy assisted with a nitrogen radio-frequency plasma source. X-ray reciprocal space mapping shows slightly in-plane strain relaxation after annealing, however, the vertical lattice constant measured by HRXRD from the (0 0 4) atoms planes shows a shrinkage, which is contrary to both the relaxation of tensile strain and the decreasing of nitrogen due to out-diffusion. The ratio of Raman intensity between the nitrogen-localized vibration mode and the GaAs-like LO is found to increase as a function of annealing temperature, which provides evidence for the increase of substitutional NAs atoms at elevated temperatures. The anneal-induced vertical lattice shrinkage can be explained in term of the redistribution of nitrogen bonding configurations among the substitutional NAs, interstitial N-N, and the N-As complex. © 2005 Elsevier B.V. All rights reserved.|
|Source Title:||Journal of Crystal Growth|
|Appears in Collections:||Staff Publications|
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