Please use this identifier to cite or link to this item: https://doi.org/10.1109/NUSOD.2006.306713
Title: Effect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths
Authors: Dixit, V.
Liu, H.F. 
Xiang, N. 
Issue Date: 2006
Citation: Dixit, V., Liu, H.F., Xiang, N. (2006). Effect of in-segregation on sub bands in Ga1-x′in x′As1-y′/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths. 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 : 5-6. ScholarBank@NUS Repository. https://doi.org/10.1109/NUSOD.2006.306713
Abstract: The In-segregation in 7.5-nm Ga1-x′In x′Ny′As1-y′/GaAs single quantum well (QW) is studied theoretically. The nominal (In, N) contents in the QW are chosen to be (0.35, 0.015) and (0.39,0.03) for the emission wavelengths at 1.3 and 1.55 μm, respectively. Muraki's model is used to model the composition profiles in the QWs. In-plane strain, confinement potential, and sub band energy levels of the QW are calculated using multi-band effective mass theory. Our results show that the optical transition energies are approximately constant for the segregation efficiencies smaller than 0.7 in both QWs. © 2006 IEEE.
Source Title: 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
URI: http://scholarbank.nus.edu.sg/handle/10635/83668
ISBN: 078039755X
DOI: 10.1109/NUSOD.2006.306713
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