Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.43.5006
Title: Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films
Authors: Wang, Q.F.
Shi, L.P.
Huang, S.M.
Miao, X.S.
Wong, K.P.
Chong, T.C. 
Keywords: Femtosecond laser pulse
Ge 2Sb 2Te 2 films
Nonthermal phase change
Reflective intensity
Ultrafast crystallization
Issue Date: Jul-2004
Citation: Wang, Q.F., Shi, L.P., Huang, S.M., Miao, X.S., Wong, K.P., Chong, T.C. (2004-07). Dynamics of ultrafast crystallization in as-deposited Ge 2Sb 2Te 5 films. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (7 B) : 5006-5008. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.43.5006
Abstract: Femtosecond laser-induced ultrafast crystallization in 80 nm as-deposited Ge 2Sb 2Te 5 films has been investigated by time-resolved microscopy. With an average fluence of approximately 10 mJ/cm 2, a transient nonequilibrinm state of the excited material was formed within 2 ps. The results can be interpreted as an electronically induced nonthermal phase transition.
Source Title: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/83662
ISSN: 00214922
DOI: 10.1143/JJAP.43.5006
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

10
checked on Nov 14, 2018

WEB OF SCIENCETM
Citations

8
checked on Nov 6, 2018

Page view(s)

31
checked on Nov 16, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.