Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83652
Title: Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric
Authors: Wang, X.P.
Shen, C.
Li, M.-F. 
Yu, H.Y.
Sun, Y. 
Feng, Y.P. 
Lim, A.
Sik, H.W.
Chin, A.
Yeo, Y.C. 
Lo, P.
Kwong, D.L.
Issue Date: 2006
Citation: Wang, X.P.,Shen, C.,Li, M.-F.,Yu, H.Y.,Sun, Y.,Feng, Y.P.,Lim, A.,Sik, H.W.,Chin, A.,Yeo, Y.C.,Lo, P.,Kwong, D.L. (2006). Dual metal gates with band-edge work functions on novel HfLaO high- κ gate dielectric. Digest of Technical Papers - Symposium on VLSI Technology : 9-10. ScholarBank@NUS Repository.
Abstract: In this work, by using a novel HfLaO high-κ (HK) gate dielectric, we show for the first time that with a thermal budget of 1000°C, Fermi-Pinning in the HK-metal gate (MG) stack can be released. The effective metal work function (EWF) can be tuned by a wide range more than the requirement of bulk CMOSFETs, and also fits the future UTB-SOI CMOSFETs when Si body thickness is approaching 3 nm or less. As prototype examples, TaN gate with EWF ∼3.9-4.4 eV and TaN/Pt gate with EWF ∼5.5 eV are shown. In addition, by replacing HfO2 with HfLaO, high κ value and low gate tunneling are maintained, BTI Vth instability is improved by one order. These new findings are correlated to the enhanced thermal stability and significantly reduced oxygen vacancy density in HfLaO compared to HfO2 as estimated by the first-principles calculations. © 2006 IEEE.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83652
ISBN: 1424400058
ISSN: 07431562
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

70
checked on Nov 9, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.