Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2727430
Title: Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel
Authors: Zang, H.
Chua, C.K.
Loh, W.Y.
Cho, B.J. 
Issue Date: 2007
Citation: Zang, H.,Chua, C.K.,Loh, W.Y.,Cho, B.J. (2007). Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel. ECS Transactions 6 (1) : 437-443. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2727430
Abstract: Dopant segregated Pt and Ni germanosilicide (PtSiGe and NiSiGe) Schottky source/drain (S/D) transistors were demonstrated on Si1-x;Ge x substrates. The Schottky barrier height of Pt-Si 0.7Ge0.3 was decreased by 0.2 eV compared to Pt-Si due to the smaller band-gap of SiGe and the dopant segregation effect. Schottky p-MOSFETs with Pt germanosilicided S/D junctions and strained Si/SiGe channels have also been demonstrated with 65 % higher drive current and lower leakage current compared with their Ni counterparts. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/83647
ISBN: 9781566775502
ISSN: 19385862
DOI: 10.1149/1.2727430
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

26
checked on Oct 19, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.