Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83635
Title: Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
Authors: Samanta, P.
Man, T.Y.
Chan, A.C.K.
Zhang, Q.
Zhu, C. 
Chan, M.
Issue Date: 2005
Source: Samanta, P.,Man, T.Y.,Chan, A.C.K.,Zhang, Q.,Zhu, C.,Chan, M. (2005). Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides. IEEE International Reliability Physics Symposium Proceedings : 594-595. ScholarBank@NUS Repository.
Abstract: Stress mode (constant current and voltage) dependence of the gate leakage current has been systematically investigated using the tantalum nitride (TaN) gated metal-oxide-silicon (MOS) capacitors at negative bias in direct tunneling (DT) regime. It is shown that constant voltage stress-induced leakage current (SILC) is higher than the constant current SILC at an equal stress time. Based on the electron energy in DT regime, our experimental results also give a better physical insight of the conduction mechanism of SILC in ultrathin silicon dioxide (SiO2) films. © 2005 IEEE.
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83635
ISBN: 0780388038
ISSN: 15417026
Appears in Collections:Staff Publications

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