Please use this identifier to cite or link to this item:
Title: Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon
Authors: Tan, C.F.
Chor, E.F. 
Lee, H.
Liu, J.
Quek, E.
Chan, L.
Keywords: End-of-range
Solid phase epitaxial regrowth
Issue Date: 10-May-2006
Citation: Tan, C.F., Chor, E.F., Lee, H., Liu, J., Quek, E., Chan, L. (2006-05-10). Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1-yCy in silicon. Thin Solid Films 504 (1-2) : 132-135. ScholarBank@NUS Repository.
Abstract: We report on the elimination of defect formation which is associated with high dose indium implantations under solid phase epitaxial regrowth (SPER) annealing conditions of 650-800 °C. This is achieved by incorporating a layer of epitaxially grown Si1-yCy layer, strategically located at the end-of-range (EOR) of the implant profile. An indium implant of 115 keV at 1 × 1014 cm- 2 was performed followed by annealing at temperature ranges of 650-800 °C. Samples with the Si 1-yCy layer revealed the elimination of secondary EOR defects with effectively suppressed indium transient enhanced diffusion (TED), indicating the function of carbon as an efficient sink for silicon interstitials at reduced annealing temperatures, in the SPER dopant activation regime. © 2005 Elsevier B.V. All rights reserved.
Source Title: Thin Solid Films
ISSN: 00406090
DOI: 10.1016/j.tsf.2005.09.157
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Mar 25, 2019


checked on Mar 6, 2019

Page view(s)

checked on Mar 16, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.