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|Title:||C-V and DLTS characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloys|
|Citation:||Feng, W.,Choi, W.K.,Bera, L.K.,Mi, J.,Yang, C.Y. (2002-11-20). C-V and DLTS characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloys. International Journal of Modern Physics B 16 (28-29) : 4207-4210. ScholarBank@NUS Repository.|
|Abstract:||Capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) characterization was performed on rapid thermal oxides (RTO) on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloys. A high interface trap density (∼1012 eV-1 cm-2) and a high apparent doping level were obtained for the SiO2/Si0.8811Ge0.113C0.0059 samples. The C-V results at different temperatures showed that the high apparent doping levels of the SiO2/Si0.8811Ge0.113C0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process.|
|Source Title:||International Journal of Modern Physics B|
|Appears in Collections:||Staff Publications|
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