Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83600
Title: C-V and DLTS characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloys
Authors: Feng, W.
Choi, W.K. 
Bera, L.K. 
Mi, J.
Yang, C.Y.
Issue Date: 20-Nov-2002
Citation: Feng, W.,Choi, W.K.,Bera, L.K.,Mi, J.,Yang, C.Y. (2002-11-20). C-V and DLTS characterization of rapid thermal oxides on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloys. International Journal of Modern Physics B 16 (28-29) : 4207-4210. ScholarBank@NUS Repository.
Abstract: Capacitance versus voltage (C-V) and deep level transient spectroscopy (DLTS) characterization was performed on rapid thermal oxides (RTO) on Si0.887Ge0.113 and Si0.8811Ge0.113C0.0059 alloys. A high interface trap density (∼1012 eV-1 cm-2) and a high apparent doping level were obtained for the SiO2/Si0.8811Ge0.113C0.0059 samples. The C-V results at different temperatures showed that the high apparent doping levels of the SiO2/Si0.8811Ge0.113C0.0059 samples might be due to the formation of SiC-related defects introduced by the high temperature oxidation process.
Source Title: International Journal of Modern Physics B
URI: http://scholarbank.nus.edu.sg/handle/10635/83600
ISSN: 02179792
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