Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICIMW.2010.5612417
Title: Continuous Wave Terahertz Photomixer from low temperature grown GaAs with high carrier mobility
Authors: Tanoto, H.
Wu, Q.Y.
Teng, J.H.
Sun, M.
Chen, Z.N.
Htoo, T. 
Chua, S.J. 
Lampin, J.F.
Gokarna, A.
Dogheche, E.
Issue Date: 2010
Source: Tanoto, H.,Wu, Q.Y.,Teng, J.H.,Sun, M.,Chen, Z.N.,Htoo, T.,Chua, S.J.,Lampin, J.F.,Gokarna, A.,Dogheche, E. (2010). Continuous Wave Terahertz Photomixer from low temperature grown GaAs with high carrier mobility. IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ICIMW.2010.5612417
Abstract: Low temperature GaAs grown by an MBE system exhibiting Hall carrier mobility of 5000 cm2/v.s. is fabricated into continuous-wave (CW) Terahertz (THz) photomixers utilizing a dual-dipole antenna with an interdigitated feed structure. The characteristics of the CW THz photomixer are presented. © 2010 IEEE.
Source Title: IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
URI: http://scholarbank.nus.edu.sg/handle/10635/83584
ISBN: 9781424466573
DOI: 10.1109/ICIMW.2010.5612417
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