Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ISDRS.2011.6135218
DC Field | Value | |
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dc.title | Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs | |
dc.contributor.author | Ivana | |
dc.contributor.author | Subramanian, S. | |
dc.contributor.author | Kong, E.Y.-J. | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:42:33Z | |
dc.date.available | 2014-10-07T04:42:33Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | Ivana,Subramanian, S.,Kong, E.Y.-J.,Zhou, Q.,Yeo, Y.-C. (2011). Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2011.6135218" target="_blank">https://doi.org/10.1109/ISDRS.2011.6135218</a> | |
dc.identifier.isbn | 9781457717550 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83556 | |
dc.description.abstract | Introduction. In xGa 1xAs is an attractive channel material to replace Si in future generations of n-MOSFETs due to its high electron mobility. Self-aligned contact metallization is needed to realize low parasitic series resistance. Recently, Ni-InGaAs self-aligned contact metallization was reported for InGaAs n-MOSFETs. 1, 2 In general, metal-InGaAs compounds could be used as self-aligned contact materials and possibly as source/drain (S/D) materials. In this work, we report the first demonstration of implant-less In 0.53Ga 0.47As n-MOSFETs with metallic S/D formed by self-aligned Co-InGaAs metallization technology. © 2011 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ISDRS.2011.6135218 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/ISDRS.2011.6135218 | |
dc.description.sourcetitle | 2011 International Semiconductor Device Research Symposium, ISDRS 2011 | |
dc.description.page | - | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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