Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2011.6135218
Title: Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
Authors: Ivana
Subramanian, S.
Kong, E.Y.-J.
Zhou, Q. 
Yeo, Y.-C. 
Issue Date: 2011
Source: Ivana,Subramanian, S.,Kong, E.Y.-J.,Zhou, Q.,Yeo, Y.-C. (2011). Co-InGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs. 2011 International Semiconductor Device Research Symposium, ISDRS 2011 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2011.6135218
Abstract: Introduction. In xGa 1xAs is an attractive channel material to replace Si in future generations of n-MOSFETs due to its high electron mobility. Self-aligned contact metallization is needed to realize low parasitic series resistance. Recently, Ni-InGaAs self-aligned contact metallization was reported for InGaAs n-MOSFETs. 1, 2 In general, metal-InGaAs compounds could be used as self-aligned contact materials and possibly as source/drain (S/D) materials. In this work, we report the first demonstration of implant-less In 0.53Ga 0.47As n-MOSFETs with metallic S/D formed by self-aligned Co-InGaAs metallization technology. © 2011 IEEE.
Source Title: 2011 International Semiconductor Device Research Symposium, ISDRS 2011
URI: http://scholarbank.nus.edu.sg/handle/10635/83556
ISBN: 9781457717550
DOI: 10.1109/ISDRS.2011.6135218
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