Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.sse.2012.05.030
Title: CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs
Authors: Ivana
Kong, E.Y.-J.
Subramanian, S.
Zhou, Q. 
Pan, J.
Yeo, Y.-C. 
Keywords: Cobalt
Contact metallization
InGaAs
Self-aligned
Issue Date: Dec-2012
Citation: Ivana, Kong, E.Y.-J., Subramanian, S., Zhou, Q., Pan, J., Yeo, Y.-C. (2012-12). CoInGaAs as a novel self-aligned metallic source/drain material for implant-less In 0.53Ga 0.47As n-MOSFETs. Solid-State Electronics 78 : 62-67. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2012.05.030
Abstract: CoInGaAs, a new self-aligned silicide-like source/drain (S/D) metallic contact, was demonstrated on In 0.53Ga 0.47As n-MOSFET. Co reacts with In 0.53Ga 0.47As at temperatures as low as 350 °C, forming metallic material comprising regions rich in cobalt gallium and cobalt arsenide. The CoInGaAs formed exhibits Schottky characteristic on p-type In 0.53Ga 0.47As, and is thus suitable for S/D material. It also exhibits ohmic behavior on n-type In 0.53Ga 0.47As (doping concentration of ∼5 × 10 19 cm -3) with contact resistance and specific contact resistivity of ∼1.12 kΩ μm and ∼6.25 × 10 -4 cm 2, respectively. The integration of CoInGaAs as metallic S/D material in In 0.53Ga 0.47As n-MOSFET produces reasonably well-behaved output characteristics. front matter © 2012 Elsevier Ltd. All rights reserved.
Source Title: Solid-State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/83555
ISSN: 00381101
DOI: 10.1016/j.sse.2012.05.030
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

8
checked on Jul 19, 2018

WEB OF SCIENCETM
Citations

7
checked on Jul 11, 2018

Page view(s)

28
checked on May 25, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.