Please use this identifier to cite or link to this item:
|Title:||CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers|
|Citation:||Zhou, H.,Kropelnicki, P.,Tsai, J.M.,Lee, C. (2013). CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) : 429-432. ScholarBank@NUS Repository. https://doi.org/10.1109/MEMSYS.2013.6474270|
|Abstract:||An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×10 8 cmHz1/2 W-1. © 2013 IEEE.|
|Source Title:||Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 15, 2018
checked on Aug 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.