Please use this identifier to cite or link to this item: https://doi.org/10.1109/MEMSYS.2013.6474270
Title: CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers
Authors: Zhou, H.
Kropelnicki, P.
Tsai, J.M.
Lee, C. 
Issue Date: 2013
Citation: Zhou, H.,Kropelnicki, P.,Tsai, J.M.,Lee, C. (2013). CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) : 429-432. ScholarBank@NUS Repository. https://doi.org/10.1109/MEMSYS.2013.6474270
Abstract: An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×10 8 cmHz1/2 W-1. © 2013 IEEE.
Source Title: Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
URI: http://scholarbank.nus.edu.sg/handle/10635/83552
ISBN: 9781467356558
ISSN: 10846999
DOI: 10.1109/MEMSYS.2013.6474270
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