Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2009.5424284
Title: CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack
Authors: Peng, J.W.
Singh, N.
Lo, G.Q.
Kwong, D.L.
Lee, S.J. 
Issue Date: 2009
Source: Peng, J.W.,Singh, N.,Lo, G.Q.,Kwong, D.L.,Lee, S.J. (2009). CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack. Technical Digest - International Electron Devices Meeting, IEDM : 38.2.1-38.2.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2009.5424284
Abstract: Ge/Si core/shell gate-all-round nanowire pMOSFET integrated with HfO 2/TaN gate stack is demonstrated using fully CMOS compatible process. Devices with 100 nm gate length achieved high ION of ∼946 μA/μm at VG - VT = -0.7 V and VDS = -1 V and on/off ratio of 104 with decent subthreshold behavior. Significant improvement in hole mobility and ballistic efficiency is demonstrated as a result of core/shell channel architecture. © 2009 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83550
ISBN: 9781424456406
ISSN: 01631918
DOI: 10.1109/IEDM.2009.5424284
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