Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83547
Title: Chemical vapor deposition of germanium nanocrystals on hafnium oxide for non-volatile memory applications
Authors: Wang, Y.Q.
Chen, J.H. 
Yoo, W.J. 
Yeo, Y.-C. 
Issue Date: 2005
Source: Wang, Y.Q.,Chen, J.H.,Yoo, W.J.,Yeo, Y.-C. (2005). Chemical vapor deposition of germanium nanocrystals on hafnium oxide for non-volatile memory applications. Materials Research Society Symposium Proceedings 830 : 269-274. ScholarBank@NUS Repository.
Abstract: In this paper, we investigate the chemical vapor deposition (CVD) of Ge nanocrystals (NCs) directly on hafnium oxide HfO 2 dielectric for non-volatile memory applications. Germane GeH 4 was used as a precursor. Atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM) were used to characterize the Ge NCs. The dependence of the Ge NC size and density on the deposition temperature, deposition time, and flow rate was explored. A high Ge NC density of 10 11 cm -2 was obtained at a deposition temperature of 600°C, with a mean diameter of about 16 nm. MOS capacitors with CVD Ge NCs embedded in the HfO 2 gate dielectric were fabricated. Hysteresis of capacitance-voltage (C-V) characteristics of capacitors with Ge NCs was observed, demonstrating memory effect. © 2005 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83547
ISSN: 02729172
Appears in Collections:Staff Publications

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