Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2012.6306318
Title: Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test
Authors: Lou, L.
Yan, H.
He, C.
Park, W.-T.
Kwong, D.-L.
Lee, C. 
Keywords: Fatigue
large compressive strain
piezoresistive
pressure sensor
silicon nanowire
Issue Date: 2012
Source: Lou, L.,Yan, H.,He, C.,Park, W.-T.,Kwong, D.-L.,Lee, C. (2012). Characterization of Si nanowires-based piezoresistive pressure sensor by dynamic cycling test. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2012.6306318
Abstract: A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in the suspended multi-layered diaphragm was investigated by a probe-based dynamic cycling test. Even under compressive strain of 1.5% after 3.6x10 5 cycles, there is no observed drift and degradation in sensor characteristics. © 2012 IEEE.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/83544
ISBN: 9781467309806
DOI: 10.1109/IPFA.2012.6306318
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

34
checked on Feb 17, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.