Please use this identifier to cite or link to this item: https://doi.org/10.1109/NEMS.2012.6196732
Title: Characterization of a multi-layered MEMS pressure sensor using piezoresistive silicon nanowire within large measurable strain range
Authors: Lou, L.
Zhang, S.
Park, W.-T.
Lim, L.
Kwong, D.-L.
Lee, C. 
Keywords: pressure sensor
silicon nanowire
Issue Date: 2012
Citation: Lou, L.,Zhang, S.,Park, W.-T.,Lim, L.,Kwong, D.-L.,Lee, C. (2012). Characterization of a multi-layered MEMS pressure sensor using piezoresistive silicon nanowire within large measurable strain range. 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 : 99-103. ScholarBank@NUS Repository. https://doi.org/10.1109/NEMS.2012.6196732
Abstract: Multilayered pressure sensors using piezoresistive silicon nanowires (SiNWs) are characterized using center displacement loading approach. The silicon nanowire (SiNW) is embedded in a multilayered diaphragm structure comprising of silicon nitride and silicon oxide. By leveraging the high fracture stress and intrinsic tensile stress of silicon nitride layer to produce a flat diaphragm, we can create compressive strain to the SiNW as large as 1.7% without damaging the diaphragm. The equivalent pressure to break the diaphragm is derived as high as above 500 psi. The sensitivity at low pressure application region (
Source Title: 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
URI: http://scholarbank.nus.edu.sg/handle/10635/83538
ISBN: 9781467311243
DOI: 10.1109/NEMS.2012.6196732
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