Please use this identifier to cite or link to this item:
|Title:||Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric|
|Citation:||Shen, C.,Li, M.-F.,Foo, C.E.,Yang, T.,Huang, D.M.,Yaps, A.,Samudra, G.S.,Yeo, Y.-C. (2006). Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346776|
|Abstract:||Highly reliable characterization of fast transient in NBTI is achieved by performing initial and stressed I - V measurements in ultra-short time (100 ns). We further provide evidences that reaction-diffusion (R-D) model can not explain the fast transient in NBTI, while hole trapping (HT) model explains all experimental observations. We also establish that previous on-the-fly methods are sound except for the slow initial measurement. This caused the apparent disagreements among results from different groups using on-the-fly methods, which is resolved in this work by the fast on-the-fly technique.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 12, 2019
checked on Jan 26, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.