Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346776
Title: Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric
Authors: Shen, C.
Li, M.-F. 
Foo, C.E.
Yang, T.
Huang, D.M.
Yaps, A.
Samudra, G.S. 
Yeo, Y.-C. 
Issue Date: 2006
Source: Shen, C.,Li, M.-F.,Foo, C.E.,Yang, T.,Huang, D.M.,Yaps, A.,Samudra, G.S.,Yeo, Y.-C. (2006). Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectric. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346776
Abstract: Highly reliable characterization of fast transient in NBTI is achieved by performing initial and stressed I - V measurements in ultra-short time (100 ns). We further provide evidences that reaction-diffusion (R-D) model can not explain the fast transient in NBTI, while hole trapping (HT) model explains all experimental observations. We also establish that previous on-the-fly methods are sound except for the slow initial measurement. This caused the apparent disagreements among results from different groups using on-the-fly methods, which is resolved in this work by the fast on-the-fly technique.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83537
ISBN: 1424404398
ISSN: 01631918
DOI: 10.1109/IEDM.2006.346776
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