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|Title:||Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions|
|Citation:||Ang, K.-W.,Chin, H.-C.,Chui, K.-J.,Li, M.-F.,Samudra, G.,Yeo, Y.-C. (2007). Carrier backscattering characteristics of strained N-MOSFET featuring silicon-carbon source/drain regions. ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference : 89-92. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDER.2006.307645|
|Abstract:||The physics of carrier transport in a sub-90nm strained SOI n-MOSFET with silicon-carbon (SiC) source/drain (S/D) regions is investigated for the first time. Significant improvement in carrier backscattering coefficient r sat and source injection velocity Vinj accounts for the large drive current IDsat enhancement in SiC S/D transistors. The improvement in rsat is attributed to the modulation of conduction band barrier which results in a shorter critical length for carrier backscattering. On the other hand, strain-induced conduction band valley splitting leads to a reduced electron effective mass and thus contributes to the Vinj enhancement. In addition, we evaluate the dependence of drive current performance on carrier injection velocity and ballistic efficiency in a short channel MOSFET. © 2006 IEEE.|
|Source Title:||ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference|
|Appears in Collections:||Staff Publications|
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