Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IEDM.2013.6724699
DC Field | Value | |
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dc.title | Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5) | |
dc.contributor.author | Cheng, R. | |
dc.contributor.author | Liu, B. | |
dc.contributor.author | Guo, P. | |
dc.contributor.author | Yang, Y. | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Gong, X. | |
dc.contributor.author | Dong, Y. | |
dc.contributor.author | Tong, Y. | |
dc.contributor.author | Bourdelle, K. | |
dc.contributor.author | Daval, N. | |
dc.contributor.author | Delprat, D. | |
dc.contributor.author | Nguyen, B.-Y. | |
dc.contributor.author | Augendre, E. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:41:55Z | |
dc.date.available | 2014-10-07T04:41:55Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Cheng, R.,Liu, B.,Guo, P.,Yang, Y.,Zhou, Q.,Gong, X.,Dong, Y.,Tong, Y.,Bourdelle, K.,Daval, N.,Delprat, D.,Nguyen, B.-Y.,Augendre, E.,Yeo, Y.-C. (2013). Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5). Technical Digest - International Electron Devices Meeting, IEDM : 26.6.1-26.6.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2013.6724699" target="_blank">https://doi.org/10.1109/IEDM.2013.6724699</a> | |
dc.identifier.isbn | 9781479923076 | |
dc.identifier.issn | 01631918 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83499 | |
dc.description.abstract | We report the first demonstration of Ge gate-all-around (GAA) nanowire (NW) p-FETs integrated with a contractible liner stressor. High performance GAA NW p-FET featuring the smallest wire width WNW of ∼3.5 nm was fabricated. Peak intrinsic transconductance Gm of 581 μS/μm and SS of 125 mV/dec. were demonstrated. When the Ge NW p-FETs were integrated with the phase change material Ge2Sb2Te5 (GST) as a liner stressor, high asymmetric strain was induced in the channel to boost the hole mobility, leading to ∼95% intrinsic Gm, lin and ∼34% extrinsic Gm, sat enhancement. Simulations show good scalability of strain due to GST liner stressor and its great potential for hole mobility enhancement. © 2013 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/IEDM.2013.6724699 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/IEDM.2013.6724699 | |
dc.description.sourcetitle | Technical Digest - International Electron Devices Meeting, IEDM | |
dc.description.page | 26.6.1-26.6.4 | |
dc.description.coden | TDIMD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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