Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2013.6724699
Title: Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)
Authors: Cheng, R. 
Liu, B.
Guo, P.
Yang, Y.
Zhou, Q. 
Gong, X.
Dong, Y.
Tong, Y.
Bourdelle, K.
Daval, N.
Delprat, D.
Nguyen, B.-Y.
Augendre, E.
Yeo, Y.-C. 
Issue Date: 2013
Source: Cheng, R.,Liu, B.,Guo, P.,Yang, Y.,Zhou, Q.,Gong, X.,Dong, Y.,Tong, Y.,Bourdelle, K.,Daval, N.,Delprat, D.,Nguyen, B.-Y.,Augendre, E.,Yeo, Y.-C. (2013). Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5). Technical Digest - International Electron Devices Meeting, IEDM : 26.6.1-26.6.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724699
Abstract: We report the first demonstration of Ge gate-all-around (GAA) nanowire (NW) p-FETs integrated with a contractible liner stressor. High performance GAA NW p-FET featuring the smallest wire width WNW of ∼3.5 nm was fabricated. Peak intrinsic transconductance Gm of 581 μS/μm and SS of 125 mV/dec. were demonstrated. When the Ge NW p-FETs were integrated with the phase change material Ge2Sb2Te5 (GST) as a liner stressor, high asymmetric strain was induced in the channel to boost the hole mobility, leading to ∼95% intrinsic Gm, lin and ∼34% extrinsic Gm, sat enhancement. Simulations show good scalability of strain due to GST liner stressor and its great potential for hole mobility enhancement. © 2013 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83499
ISBN: 9781479923076
ISSN: 01631918
DOI: 10.1109/IEDM.2013.6724699
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