Please use this identifier to cite or link to this item:
https://doi.org/10.1109/IEDM.2013.6724699
Title: | Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5) | Authors: | Cheng, R. Liu, B. Guo, P. Yang, Y. Zhou, Q. Gong, X. Dong, Y. Tong, Y. Bourdelle, K. Daval, N. Delprat, D. Nguyen, B.-Y. Augendre, E. Yeo, Y.-C. |
Issue Date: | 2013 | Citation: | Cheng, R.,Liu, B.,Guo, P.,Yang, Y.,Zhou, Q.,Gong, X.,Dong, Y.,Tong, Y.,Bourdelle, K.,Daval, N.,Delprat, D.,Nguyen, B.-Y.,Augendre, E.,Yeo, Y.-C. (2013). Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5). Technical Digest - International Electron Devices Meeting, IEDM : 26.6.1-26.6.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724699 | Abstract: | We report the first demonstration of Ge gate-all-around (GAA) nanowire (NW) p-FETs integrated with a contractible liner stressor. High performance GAA NW p-FET featuring the smallest wire width WNW of ∼3.5 nm was fabricated. Peak intrinsic transconductance Gm of 581 μS/μm and SS of 125 mV/dec. were demonstrated. When the Ge NW p-FETs were integrated with the phase change material Ge2Sb2Te5 (GST) as a liner stressor, high asymmetric strain was induced in the channel to boost the hole mobility, leading to ∼95% intrinsic Gm, lin and ∼34% extrinsic Gm, sat enhancement. Simulations show good scalability of strain due to GST liner stressor and its great potential for hole mobility enhancement. © 2013 IEEE. | Source Title: | Technical Digest - International Electron Devices Meeting, IEDM | URI: | http://scholarbank.nus.edu.sg/handle/10635/83499 | ISBN: | 9781479923076 | ISSN: | 01631918 | DOI: | 10.1109/IEDM.2013.6724699 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.