Please use this identifier to cite or link to this item:
|Title:||Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)|
|Authors:||Cheng, R. |
|Citation:||Cheng, R.,Liu, B.,Guo, P.,Yang, Y.,Zhou, Q.,Gong, X.,Dong, Y.,Tong, Y.,Bourdelle, K.,Daval, N.,Delprat, D.,Nguyen, B.-Y.,Augendre, E.,Yeo, Y.-C. (2013). Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5). Technical Digest - International Electron Devices Meeting, IEDM : 26.6.1-26.6.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724699|
|Abstract:||We report the first demonstration of Ge gate-all-around (GAA) nanowire (NW) p-FETs integrated with a contractible liner stressor. High performance GAA NW p-FET featuring the smallest wire width WNW of ∼3.5 nm was fabricated. Peak intrinsic transconductance Gm of 581 μS/μm and SS of 125 mV/dec. were demonstrated. When the Ge NW p-FETs were integrated with the phase change material Ge2Sb2Te5 (GST) as a liner stressor, high asymmetric strain was induced in the channel to boost the hole mobility, leading to ∼95% intrinsic Gm, lin and ∼34% extrinsic Gm, sat enhancement. Simulations show good scalability of strain due to GST liner stressor and its great potential for hole mobility enhancement. © 2013 IEEE.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 12, 2019
checked on Jan 26, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.