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|Title:||Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5)|
|Authors:||Cheng, R. |
|Source:||Cheng, R.,Liu, B.,Guo, P.,Yang, Y.,Zhou, Q.,Gong, X.,Dong, Y.,Tong, Y.,Bourdelle, K.,Daval, N.,Delprat, D.,Nguyen, B.-Y.,Augendre, E.,Yeo, Y.-C. (2013). Asymetrically strained high performance Germanium gate-all-around nanowire p-FETs featuring 3.5 nm wire width and contractible phase change liner stressor (Ge2Sb2Te5). Technical Digest - International Electron Devices Meeting, IEDM : 26.6.1-26.6.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724699|
|Abstract:||We report the first demonstration of Ge gate-all-around (GAA) nanowire (NW) p-FETs integrated with a contractible liner stressor. High performance GAA NW p-FET featuring the smallest wire width WNW of ∼3.5 nm was fabricated. Peak intrinsic transconductance Gm of 581 μS/μm and SS of 125 mV/dec. were demonstrated. When the Ge NW p-FETs were integrated with the phase change material Ge2Sb2Te5 (GST) as a liner stressor, high asymmetric strain was induced in the channel to boost the hole mobility, leading to ∼95% intrinsic Gm, lin and ∼34% extrinsic Gm, sat enhancement. Simulations show good scalability of strain due to GST liner stressor and its great potential for hole mobility enhancement. © 2013 IEEE.|
|Source Title:||Technical Digest - International Electron Devices Meeting, IEDM|
|Appears in Collections:||Staff Publications|
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