Please use this identifier to cite or link to this item: https://doi.org/10.1109/ECCE-Asia.2013.6579124
Title: Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
Authors: Wang, Y.-H.
Liang, Y.C. 
Samudra, G.S. 
Chang, T.-F.
Huang, C.-F.
Yuan, L.
Lo, G.-Q.
Keywords: AlGaN/GaN HEMT
high temperature effects
wide bandgap devices
Issue Date: 2013
Source: Wang, Y.-H.,Liang, Y.C.,Samudra, G.S.,Chang, T.-F.,Huang, C.-F.,Yuan, L.,Lo, G.-Q. (2013). Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices. 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013 : 379-384. ScholarBank@NUS Repository. https://doi.org/10.1109/ECCE-Asia.2013.6579124
Abstract: This paper reports analytical modelling and analysis of the temperature dependence on the device characteristics of the AlGaN/GaN high electron mobility transistors (HEMTs). A physics-based model is proposed in this study in order to correctly predict the gate Schottky barrier height (ΦB), Fermi-level from conduction band energy (EC-EF), two-dimensional electron gas (2DEG) sheet density, gate threshold (V th) and sub-threshold voltages (ID-VG), and drain current-voltage (ID-VD) characteristics under various high temperature (300K∼500K) conditions. The analytical results are then verified by comparing with the laboratory measurement as well as the numerical results obtained from the Sentaurus TCAD simulation. The proposed model is found to be useful for power electronic device designers on the prediction of the AlGaN/GaN HEMT device performance under high temperature operation without the use of heavy numerical solving process that requires complicated customized computer coding. © 2013 IEEE.
Source Title: 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013
URI: http://scholarbank.nus.edu.sg/handle/10635/83488
ISBN: 9781479904822
DOI: 10.1109/ECCE-Asia.2013.6579124
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

1
checked on Feb 21, 2018

Page view(s)

39
checked on Feb 24, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.