Please use this identifier to cite or link to this item:
https://doi.org/10.7567/JJAP.52.04CF06
DC Field | Value | |
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dc.title | AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process | |
dc.contributor.author | Liu, X. | |
dc.contributor.author | Zhan, C. | |
dc.contributor.author | Wai Chan, K. | |
dc.contributor.author | Samuel Owen, M.H. | |
dc.contributor.author | Liu, W. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Tan, L.S. | |
dc.contributor.author | Chen, K.J. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:41:21Z | |
dc.date.available | 2014-10-07T04:41:21Z | |
dc.date.issued | 2013-04 | |
dc.identifier.citation | Liu, X., Zhan, C., Wai Chan, K., Samuel Owen, M.H., Liu, W., Chi, D.Z., Tan, L.S., Chen, K.J., Yeo, Y.-C. (2013-04). AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free process. Japanese Journal of Applied Physics 52 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.52.04CF06 | |
dc.identifier.issn | 00214922 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83449 | |
dc.description.abstract | This paper reports the fabrication and characterization of AlGaN/GaN-on-sapphire metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain spacing L GDof 20 μm achieved an off-state breakdown voltage V BRof 1400 V and an on-state resistance Ron of 22mω cm 2. This is the highest VBR achieved so far for gold-free AlGaN/GaN MOS-HEMTs. In addition, high on/off current ratio Ion=Ioff of ∼109 and low gate leakage current IG of ∼10-11 A/mm were also obtained. © 2013 The Japan Society of Applied Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.7567/JJAP.52.04CF06 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.7567/JJAP.52.04CF06 | |
dc.description.sourcetitle | Japanese Journal of Applied Physics | |
dc.description.volume | 52 | |
dc.description.issue | 4 PART 2 | |
dc.description.page | - | |
dc.identifier.isiut | 000320002400083 | |
Appears in Collections: | Staff Publications |
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