Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2006.306255
Title: A novel high-k gate dielectric HfLaO for next generation CMOS technology
Authors: Li, M.-F. 
Wang, X.P.
Yu, H.Y.
Zhu, C.X. 
Chin, A.
Du, A.Y.
Shao, J.
Lu, W.
Shen, X.C.
Liu, P.
Hung, S.
Lo, P.
Kwong, D.L.
Issue Date: 2007
Citation: Li, M.-F.,Wang, X.P.,Yu, H.Y.,Zhu, C.X.,Chin, A.,Du, A.Y.,Shao, J.,Lu, W.,Shen, X.C.,Liu, P.,Hung, S.,Lo, P.,Kwong, D.L. (2007). A novel high-k gate dielectric HfLaO for next generation CMOS technology. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 372-375. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2006.306255
Abstract: The physical and electrical characteristics of high-k (HK) gate dielectric HfLaO were systematically investigated. Incorporation of La in HfO2 can raise the film crystallization temperature from 400°C to 900°C Moreover, NMOSFETs fabricated with HfLaO gate dielectric exhibit superior electrical performances in terms of threshold voltage (Vth), bias temperature instability (BTI), channel electron mobility and gate leakage current compared to those fabricated with HfO2 dielectric. Particularly, we also report that the effective work function (EWF) of metal gate (MG) can be tuned to a wide enough range to fulfill the requirement of bulk CMOSFETs by employing HfLaO dielectric and n- and p-type metal gates respectively. These advantages are correlated to die enhanced thermal stability and reduction of oxygen vacancy density in HfLaO compared to HfO2, making it a promising high-k gate dielectric to replace SiO2 and SiON to meet the ITRS requirements. Finally, a possible dual metal gate CMOS integration process is proposed. © 2006 IEEE.
Source Title: ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83400
ISBN: 1424401615
DOI: 10.1109/ICSICT.2006.306255
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