Please use this identifier to cite or link to this item: https://doi.org/10.1109/MWSYM.2008.4632944
Title: A novel doherty amplifier for enhanced load modulation and higher bandwidth
Authors: Sarkeshi, M.
Leong, O.B. 
Van Roermund, A.
Keywords: Bandwidth
Doherty
Doherty power amplifier
Power added efficiency
Issue Date: 2008
Citation: Sarkeshi, M.,Leong, O.B.,Van Roermund, A. (2008). A novel doherty amplifier for enhanced load modulation and higher bandwidth. IEEE MTT-S International Microwave Symposium Digest : 763-766. ScholarBank@NUS Repository. https://doi.org/10.1109/MWSYM.2008.4632944
Abstract: We are reporting a new topology for the Doherty amplifier to increase its bandwidth and enhance the load modulation. A varactor-based impedance transformer has been employed to replace the bulky and narrowband quarter-wave impedance inverter. Load modulation is carried out adaptively using the proposed varactor-based structure based on the input power level. An envelope detector is employed for adaptive impedance transformation of the carrier amplifier as well as bias adaptation of the peak amplifier. Based on the proposed topology, a 2W Doherty amplifier has been fabricated using discrete pHEMT transistors and low loss varactors. In order to evaluate the broad-band/multi-band performance of the proposed topology, measurements have been carried out at three sample frequencies (1.8GHZ, 2GHz and 2.2GHz) over a 400 MHz bandwidth. Power added efficiency of better than 45.3% has been achieved at maximum power level and 6-dB power backoff and maintained over the entire bandwidth. Measured IM3 is better than -42.2dBc at P1dB of 33dBm for all design frequencies. © 2008 IEEE.
Source Title: IEEE MTT-S International Microwave Symposium Digest
URI: http://scholarbank.nus.edu.sg/handle/10635/83396
ISBN: 9781424417810
ISSN: 0149645X
DOI: 10.1109/MWSYM.2008.4632944
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