Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2008.4588550
Title: A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement
Authors: Liu, F.
Wong, H.-S.
Ang, K.-W.
Zhu, M. 
Wang, X.
Lai, D.M.-Y.
Lim, P.-C.
Tan, B.L.H.
Tripathy, S.
Oh, S.-A.
Samudra, G.S. 
Balasubramanian, N.
Yeo, Y.-C. 
Issue Date: 2008
Source: Liu, F.,Wong, H.-S.,Ang, K.-W.,Zhu, M.,Wang, X.,Lai, D.M.-Y.,Lim, P.-C.,Tan, B.L.H.,Tripathy, S.,Oh, S.-A.,Samudra, G.S.,Balasubramanian, N.,Yeo, Y.-C. (2008). A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement. Digest of Technical Papers - Symposium on VLSI Technology : 26-27. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2008.4588550
Abstract: We report for the first time a new process technology for boosting the Ge content in SiGe source/drain (S/D) stressors to increase strain and performance levels in p-FETs. By laser-induced local melting and intermixing of an amorphous Ge layer with an underlying Si0.8Ge0.2 S/D region, a graded SiGe S/D stressor is formed upon recrystallization. Peak Ge content in the graded SiGe S/D is doubled over the as-grown film. Raman analysis confirmed the retention of high S/D strain levels due to the rapid non-equilibrium recrystallization process. The new process technology developed here employs several simple additional steps, including amorphous Ge deposition and laser anneal (LA). For a p-FET with Ge enriched S/D, 21% and 12% IDsat enhancement at a fixed IOFF of 2 × 10-8 A/μm is observed over control p-FETs with Si0.8Ge0.2 S/D formed by RTA and LA, respectively. © 2008 IEEE.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83390
ISBN: 9781424418053
ISSN: 07431562
DOI: 10.1109/VLSIT.2008.4588550
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