Please use this identifier to cite or link to this item: https://doi.org/10.1109/VTSA.2010.5488907
Title: A new self-aligned contact technology for III-V MOSFETs
Authors: Guo, H.
Zhang, X.
Chin, H.-C.
Gong, X.
Koh, S.-M.
Zhan, C.
Luo, G.-L.
Chang, C.-Y.
Lin, H.-Y.
Chien, C.-H.
Han, Z.-Y.
Huang, S.-C.
Cheng, C.-C.
Ko, C.-H.
Wann, C.H.
Yeo, Y.-C. 
Issue Date: 2010
Source: Guo, H.,Zhang, X.,Chin, H.-C.,Gong, X.,Koh, S.-M.,Zhan, C.,Luo, G.-L.,Chang, C.-Y.,Lin, H.-Y.,Chien, C.-H.,Han, Z.-Y.,Huang, S.-C.,Cheng, C.-C.,Ko, C.-H.,Wann, C.H.,Yeo, Y.-C. (2010). A new self-aligned contact technology for III-V MOSFETs. Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 : 152-153. ScholarBank@NUS Repository. https://doi.org/10.1109/VTSA.2010.5488907
Abstract: We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs. © 2010 IEEE.
Source Title: Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
URI: http://scholarbank.nus.edu.sg/handle/10635/83388
ISBN: 9781424450633
DOI: 10.1109/VTSA.2010.5488907
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