Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4418881
Title: A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors
Authors: Tan, K.-M.
Zhu, M. 
Fang, W.-W.
Yang, M.
Liow, T.-Y.
Lee, R.T.P. 
Hoe, K.M.
Tung, C.-H.
Balasubramanian, N.
Samudra, G.S. 
Yeo, Y.-C. 
Issue Date: 2007
Citation: Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2007). A new liner stressor with very high intrinsic stress (> 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained p-channel transistors. Technical Digest - International Electron Devices Meeting, IEDM : 127-130. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418881
Abstract: We report a new liner stressor comprising a diamond-like carbon (DLC) layer with very high intrinsic stress for boosting the performance of p-channel transistors. A record-high intrinsic compressive stress of more than 6 GPa is demonstrated, well exceeding values currently achievable with the conventional SiN contact etch-stop layer (CESL). Two major advantages of the DLC layer are lower permittivity and significantly higher compressive stress, therefore enabling further pitch and density scaling with less performance compromise. We integrated the DLC liner stressor with nanoscale SOI p-FETs, demonstrating significant drive current ID,sat enhancement of up to 58% over control devices without liner stressor. © 2007 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83384
ISSN: 01631918
DOI: 10.1109/IEDM.2007.4418881
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