Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2011.6131678
Title: A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs
Authors: Ding, Y.
Cheng, R. 
Koh, S.-M.
Liu, B.
Gyanathan, A.
Zhou, Q. 
Tong, Y.
Lim, P.S.-Y.
Han, G. 
Yeo, Y.-C. 
Issue Date: 2011
Citation: Ding, Y.,Cheng, R.,Koh, S.-M.,Liu, B.,Gyanathan, A.,Zhou, Q.,Tong, Y.,Lim, P.S.-Y.,Han, G.,Yeo, Y.-C. (2011). A new Ge 2Sb 2Te 5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs. Technical Digest - International Electron Devices Meeting, IEDM : 35.4.1-35.4.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2011.6131678
Abstract: We report the first demonstration of a novel Ge 2Sb 2Te 5 (GST) liner stressor which can be shrunk or contracted (in volume) during phase-change to realize performance enhancement in p-channel FinFETs. FinFETs with ultra-scaled gate length down to ∼4.5 nm were used. Amorphous GST (α-GST) liner has intrinsic stress that increases the p-FinFET drive current as compared to unstrained control devices. Further, when the α-GST changes phase to crystalline GST (c-GST), the GST liner contracts, leading to very high channel stress and drive current enhancement. © 2011 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83381
ISBN: 9781457705052
ISSN: 01631918
DOI: 10.1109/IEDM.2011.6131678
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