Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83379
Title: A new expandible ZnS-SiO2 liner stressor for n-channel FinFETs
Authors: Ding, Y.
Tong, X.
Zhou, Q. 
Liu, B.
Gyanathan, A.
Tong, Y.
Yeo, Y.-C. 
Issue Date: 2013
Source: Ding, Y.,Tong, X.,Zhou, Q.,Liu, B.,Gyanathan, A.,Tong, Y.,Yeo, Y.-C. (2013). A new expandible ZnS-SiO2 liner stressor for n-channel FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : T86-T87. ScholarBank@NUS Repository.
Abstract: We report the first demonstration of a novel ZnS-SiO2 liner stressor to enhance drive current in Si n-channel FinFETs. ZnS-SiO2 expands during thermal anneal due to an increase in crystallite size. An expanded ZnS-SiO2 liner exerts high tensile stress in the N-FinFET channel and leads to a 30% ID,Sat improvement, with no compromise on short channel effects. This technology was realized on FinFETs with Si:C S/D stressors and Al-incorporated NiSi contacts. © 2013 JSAP.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83379
ISBN: 9784863483477
ISSN: 07431562
Appears in Collections:Staff Publications

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