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https://scholarbank.nus.edu.sg/handle/10635/83379
| Title: | A new expandible ZnS-SiO2 liner stressor for n-channel FinFETs | Authors: | Ding, Y. Tong, X. Zhou, Q. Liu, B. Gyanathan, A. Tong, Y. Yeo, Y.-C. |
Issue Date: | 2013 | Citation: | Ding, Y.,Tong, X.,Zhou, Q.,Liu, B.,Gyanathan, A.,Tong, Y.,Yeo, Y.-C. (2013). A new expandible ZnS-SiO2 liner stressor for n-channel FinFETs. Digest of Technical Papers - Symposium on VLSI Technology : T86-T87. ScholarBank@NUS Repository. | Abstract: | We report the first demonstration of a novel ZnS-SiO2 liner stressor to enhance drive current in Si n-channel FinFETs. ZnS-SiO2 expands during thermal anneal due to an increase in crystallite size. An expanded ZnS-SiO2 liner exerts high tensile stress in the N-FinFET channel and leads to a 30% ID,Sat improvement, with no compromise on short channel effects. This technology was realized on FinFETs with Si:C S/D stressors and Al-incorporated NiSi contacts. © 2013 JSAP. | Source Title: | Digest of Technical Papers - Symposium on VLSI Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/83379 | ISBN: | 9784863483477 | ISSN: | 07431562 |
| Appears in Collections: | Staff Publications |
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