Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDERC.2012.6343362
Title: A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
Authors: Zhang, X.
Guo, H.X.
Gong, X.
Yeo, Y.-C. 
Issue Date: 2012
Citation: Zhang, X.,Guo, H.X.,Gong, X.,Yeo, Y.-C. (2012). A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts. European Solid-State Device Research Conference : 177-180. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2012.6343362
Abstract: We demonstrated In0.53Ga0.47As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n++ In0.53Ga 0.47As source and drain, series resistance of ∼250 Ω·μm was achieved, which is the lowest value ever reported for In0.53Ga0.47As non-planar devices. A gate-last process was used. FinFET with channel length of 500 nm and EOT of 3 nm has an I ON/IOFF of over 105 and peak Gm of 255 μS/μm at VD = 0.5 V. © 2012 IEEE.
Source Title: European Solid-State Device Research Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/83348
ISBN: 9781467317078
ISSN: 19308876
DOI: 10.1109/ESSDERC.2012.6343362
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