Please use this identifier to cite or link to this item:
|Title:||A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance|
|Citation:||Toh, E.-H., Wang, G.H., Chan, L., Lo, G.-Q., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C. (2008). A complementary-I-MOS technology featuring SiGe channel and I-region for enhancement of impact-ionization, breakdown voltage, and performance. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 295-298. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430936|
|Abstract:||We report the first demonstration of Silicon-Germanium (SiGe) Impact-ionization MOS (I-MOS) transistors that feature a SiGe channel and a SiGe Impact-ionization region. The lower bandgap of SiGe as compared to Si contributes to higher electron and hole impact-ionization rates, leading to avalanche breakdown at a much reduced source voltage and enhanced device performance. Both n- and p-channel I-MOS devices were fabricated on Si 0.75Ge0.25-On-Insulator substrates using a CMOS-compatible process flow. Compared to Si I-MOS, the breakdown voltage of SiGe I-MOS is reduced by ∼1 V along with the doubling of the drive current and transconductance. The subthreshold swing is also improved. Excellent subthreshold swings of 2.88 mV/decade and 3.24 mV/decade are achieved for the n- and p-channel SiGe I-MOS devices, respectively. © 2007 IEEE.|
|Source Title:||ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 16, 2018
checked on Jun 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.