Please use this identifier to cite or link to this item: https://doi.org/10.1109/CICC.2013.6658532
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dc.titleA 50 μw/Ch artifacts-insensitive neural recorder using frequency-shaping technique
dc.contributor.authorXu, J.
dc.contributor.authorYang, Z.
dc.date.accessioned2014-10-07T04:39:59Z
dc.date.available2014-10-07T04:39:59Z
dc.date.issued2013-11-07
dc.identifier.citationXu, J.,Yang, Z. (2013-11-07). A 50 μw/Ch artifacts-insensitive neural recorder using frequency-shaping technique. Proceedings of the Custom Integrated Circuits Conference : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/CICC.2013.6658532" target="_blank">https://doi.org/10.1109/CICC.2013.6658532</a>
dc.identifier.isbn9781467361460
dc.identifier.issn08865930
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83327
dc.description.abstractThis paper presents a frequency-shaping (FS) neural recording interface that can inherently reject electrode offset, 5-10 times increase input impedance, 4.5-bit extend system dynamic range (DR), and provide much more tolerance to motion artifacts and 50/60 Hz power noise interferences. It is supposed to be more suitable for long-term brain-machine-interface (BMI) experiments. To achieve the mentioned performance above, the proposed architecture adopts an auto-zero offset calibration to avoid system saturation, a delayed-signaling noise cancellation to attenuate kT/C noise, and an automatical data-splitting technique to reduce input-referred noise at low frequencies. Measured at a 40 kHz sampling clock and ± 0.6 V supply, the recorder consumes 50 μW/ch, including 22 μW for FS amplifier, 12 μW for gain-stage amplifier, 12 μW for buffer, and 4 μW for successive approximation register (SAR) analog-to-digital converter (ADC). The designed SAR ADC achieves an effective-number-of-bit (ENOB) of 11-bit in a 160 kHz bandwidth. In addition, the recorder has a 3 pF input capacitance and 15.5-bit (11-bit+4.5-bit) system DR due to the utilization of FS technique. The designed chip occupies 0.76 mm2/ch in a 0.13 μm CMOS process. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/CICC.2013.6658532
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/CICC.2013.6658532
dc.description.sourcetitleProceedings of the Custom Integrated Circuits Conference
dc.description.page-
dc.description.codenPCICE
dc.identifier.isiutNOT_IN_WOS
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