Please use this identifier to cite or link to this item:
https://doi.org/10.1109/CICC.2013.6658532
DC Field | Value | |
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dc.title | A 50 μw/Ch artifacts-insensitive neural recorder using frequency-shaping technique | |
dc.contributor.author | Xu, J. | |
dc.contributor.author | Yang, Z. | |
dc.date.accessioned | 2014-10-07T04:39:59Z | |
dc.date.available | 2014-10-07T04:39:59Z | |
dc.date.issued | 2013-11-07 | |
dc.identifier.citation | Xu, J.,Yang, Z. (2013-11-07). A 50 μw/Ch artifacts-insensitive neural recorder using frequency-shaping technique. Proceedings of the Custom Integrated Circuits Conference : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/CICC.2013.6658532" target="_blank">https://doi.org/10.1109/CICC.2013.6658532</a> | |
dc.identifier.isbn | 9781467361460 | |
dc.identifier.issn | 08865930 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83327 | |
dc.description.abstract | This paper presents a frequency-shaping (FS) neural recording interface that can inherently reject electrode offset, 5-10 times increase input impedance, 4.5-bit extend system dynamic range (DR), and provide much more tolerance to motion artifacts and 50/60 Hz power noise interferences. It is supposed to be more suitable for long-term brain-machine-interface (BMI) experiments. To achieve the mentioned performance above, the proposed architecture adopts an auto-zero offset calibration to avoid system saturation, a delayed-signaling noise cancellation to attenuate kT/C noise, and an automatical data-splitting technique to reduce input-referred noise at low frequencies. Measured at a 40 kHz sampling clock and ± 0.6 V supply, the recorder consumes 50 μW/ch, including 22 μW for FS amplifier, 12 μW for gain-stage amplifier, 12 μW for buffer, and 4 μW for successive approximation register (SAR) analog-to-digital converter (ADC). The designed SAR ADC achieves an effective-number-of-bit (ENOB) of 11-bit in a 160 kHz bandwidth. In addition, the recorder has a 3 pF input capacitance and 15.5-bit (11-bit+4.5-bit) system DR due to the utilization of FS technique. The designed chip occupies 0.76 mm2/ch in a 0.13 μm CMOS process. © 2013 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/CICC.2013.6658532 | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/CICC.2013.6658532 | |
dc.description.sourcetitle | Proceedings of the Custom Integrated Circuits Conference | |
dc.description.page | - | |
dc.description.coden | PCICE | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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