Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.545358
Title: A 3 × 2 waveguide switch based on SiGe for C-band operation
Authors: Teng, J.H.
Chua, S.J. 
Miao, L.Y.
Yin, R.
Li, B.J.
Fitzgerald, E.
Leitz, C.W.
Keywords: Modulator
Optical switch
SiGe
Total internal reflection
Waveguide
Issue Date: 2004
Citation: Teng, J.H., Chua, S.J., Miao, L.Y., Yin, R., Li, B.J., Fitzgerald, E., Leitz, C.W. (2004). A 3 × 2 waveguide switch based on SiGe for C-band operation. Proceedings of SPIE - The International Society for Optical Engineering 5451 : 243-250. ScholarBank@NUS Repository. https://doi.org/10.1117/12.545358
Abstract: A waveguide switch structure with three input and two output ports is designed in SiGe/Si material for the operation around 1.55 μm in wavelength. Strained Si 0.96Ge 0.04 layer with a thickness of 2.5 μm is used as the waveguide core layer. Single mode ridge waveguide of 10 μm wide and 1μm deep is formed by plasma etching. The switching functi aaon is realized by total internal reflection. Two separate electrodes are used to control the refractive index change in the intersection region through carrier injection. The switch device can also work as splitter, modulator, or add-drop multiplexer, etc. around wavelength of 1.55 μm. An extinction ratio of about 20 dB is achieved for the modulation state from the two side input ports and about 10dB for the central input port.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/83321
ISSN: 0277786X
DOI: 10.1117/12.545358
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