Please use this identifier to cite or link to this item:
|Title:||A 3 × 2 waveguide switch based on SiGe for C-band operation|
Total internal reflection
|Citation:||Teng, J.H., Chua, S.J., Miao, L.Y., Yin, R., Li, B.J., Fitzgerald, E., Leitz, C.W. (2004). A 3 × 2 waveguide switch based on SiGe for C-band operation. Proceedings of SPIE - The International Society for Optical Engineering 5451 : 243-250. ScholarBank@NUS Repository. https://doi.org/10.1117/12.545358|
|Abstract:||A waveguide switch structure with three input and two output ports is designed in SiGe/Si material for the operation around 1.55 μm in wavelength. Strained Si 0.96Ge 0.04 layer with a thickness of 2.5 μm is used as the waveguide core layer. Single mode ridge waveguide of 10 μm wide and 1μm deep is formed by plasma etching. The switching functi aaon is realized by total internal reflection. Two separate electrodes are used to control the refractive index change in the intersection region through carrier injection. The switch device can also work as splitter, modulator, or add-drop multiplexer, etc. around wavelength of 1.55 μm. An extinction ratio of about 20 dB is achieved for the modulation state from the two side input ports and about 10dB for the central input port.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 16, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.