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|Title:||19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells|
Inline emitter diffusion
Singlecrystalline silicon wafer
|Citation:||Basu, P.K., Shetty, K.D., Vinodh, S., Sarangi, D., Palina, N., Duttagupta, S., Lin, F., Du, Z., Chen, J., Hoex, B., Boreland, M.B., Aberle, A.G. (2012). 19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells. Energy Procedia 27 : 444-448. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.07.091|
|Abstract:||Presently, large-area high-efficiency (> 19%) screen printed p-type silicon solar cells are dominated by the aluminium local back surface field (Al-LBSF) technology. However, all those cells were fabricated with tube diffused emitters. Inline diffusion, using phosphoric acid as the dopant source, offers potentially low-cost emitter formation for p-type silicon wafer solar cells. To achieve higher efficiencies for these solar cells, the authors have applied a new Si etch solution to remove the dead layer of the inline diffused emitter. Efficiencies up to 18.3% were obtained for standard Al back surface field (Al-BSF) solar cells. In this work, the same etch-back process was applied to Al-LBSF devices. We report a maximum efficiency of 19.0%, an average batch efficiency of 18.9% (± 0.1% StDev), and a maximum open-circuit voltage of 640 mV for the cells, using industry-grade p-type 6 inch wide pseudosquare Cz mono-Si wafers. These results indicate that inline-diffused emitters can be used in high-efficiency silicon wafer solar cells.|
|Source Title:||Energy Procedia|
|Appears in Collections:||Staff Publications|
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