Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2012.07.091
Title: 19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells
Authors: Basu, P.K.
Shetty, K.D.
Vinodh, S.
Sarangi, D.
Palina, N.
Duttagupta, S.
Lin, F.
Du, Z.
Chen, J.
Hoex, B. 
Boreland, M.B.
Aberle, A.G. 
Keywords: Al-LBSF
Inline emitter diffusion
Laser opening
SERIS etch
Singlecrystalline silicon wafer
Issue Date: 2012
Citation: Basu, P.K., Shetty, K.D., Vinodh, S., Sarangi, D., Palina, N., Duttagupta, S., Lin, F., Du, Z., Chen, J., Hoex, B., Boreland, M.B., Aberle, A.G. (2012). 19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells. Energy Procedia 27 : 444-448. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.07.091
Abstract: Presently, large-area high-efficiency (> 19%) screen printed p-type silicon solar cells are dominated by the aluminium local back surface field (Al-LBSF) technology. However, all those cells were fabricated with tube diffused emitters. Inline diffusion, using phosphoric acid as the dopant source, offers potentially low-cost emitter formation for p-type silicon wafer solar cells. To achieve higher efficiencies for these solar cells, the authors have applied a new Si etch solution to remove the dead layer of the inline diffused emitter. Efficiencies up to 18.3% were obtained for standard Al back surface field (Al-BSF) solar cells. In this work, the same etch-back process was applied to Al-LBSF devices. We report a maximum efficiency of 19.0%, an average batch efficiency of 18.9% (± 0.1% StDev), and a maximum open-circuit voltage of 640 mV for the cells, using industry-grade p-type 6 inch wide pseudosquare Cz mono-Si wafers. These results indicate that inline-diffused emitters can be used in high-efficiency silicon wafer solar cells.
Source Title: Energy Procedia
URI: http://scholarbank.nus.edu.sg/handle/10635/83292
ISSN: 18766102
DOI: 10.1016/j.egypro.2012.07.091
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