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Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISTDM.2012.6222449
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dc.title(NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs
dc.contributor.authorWang, L.
dc.contributor.authorSu, S.
dc.contributor.authorWang, W.
dc.contributor.authorGong, X.
dc.contributor.authorYang, Y.
dc.contributor.authorGuo, P.
dc.contributor.authorZhang, G.
dc.contributor.authorXue, C.
dc.contributor.authorCheng, B.
dc.contributor.authorHan, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:39:32Z
dc.date.available2014-10-07T04:39:32Z
dc.date.issued2012
dc.identifier.citationWang, L.,Su, S.,Wang, W.,Gong, X.,Yang, Y.,Guo, P.,Zhang, G.,Xue, C.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). (NH4)2S passivation for high mobility germanium-Tin (GeSn) p-MOSFETs. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings : 44-45. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISTDM.2012.6222449" target="_blank">https://doi.org/10.1109/ISTDM.2012.6222449</a>
dc.identifier.isbn9781457718625
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83287
dc.description.abstractIn this work, we report high mobility Ge 0.958Sn 0.042 p-MOSFETs where the GeSn surface was (NH4)2S passivated prior to gate dielectric deposition. Ge 0.958Sn 0.042 p-MOSFETs with (NH4)2S passivation demonstrate a peak effective mobility of 509 cm2/Vs and a subthreshold swing S of 220 mV/decade. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ISTDM.2012.6222449
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ISTDM.2012.6222449
dc.description.sourcetitle2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
dc.description.page44-45
dc.identifier.isiutNOT_IN_WOS
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