Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.896892
Title: Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET
Authors: Lim, A.E.-J.
Lee, R.T.P. 
Wang, X.P.
Hwang, W.S.
Tung, C.H.
Samudra, G.S. 
Kwong, D.-L.
Yeo, Y.-C. 
Keywords: Interlayer
Metal gate
Nickel fully silicided (Ni-FUSI)
Terbium (Tb)
Work function modulation
Yttrium (Y)
Issue Date: Jun-2007
Citation: Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.H., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2007-06). Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET. IEEE Electron Device Letters 28 (6) : 482-485. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.896892
Abstract: Novel yttrium- and terbium-based interlayers YIL and ILIL respectively) on SiO2 and HfO2 gate dielectrics were employed for NMOS work function Φm modulation of undoped nickel fully silicided (Ni-FUSI) gate. Bandedge Ni-FUSI gate Φm of ∼ 4.11 and ∼ 4.07 eV was obtained by insertion of ultrathin (∼ 1 nm) YIL and TbIL, respectively, on the SiO2 gate dielectric in a gate-first process (with 1000 °C anneal). NiSi Φm on SiO2 could also be tuned between the Si midgap and the conduction bandedge EC by varying the interlayer thickness. The achievement of NiSi Φm around 4.28 eV on the HfO2 gate dielectric using interlayer insertion makes this an attractive Φm modulation technique for Ni-FUSI gates on SiO2 and high-κ dielectrics. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83283
ISSN: 07413106
DOI: 10.1109/LED.2007.896892
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

7
checked on Sep 19, 2018

WEB OF SCIENCETM
Citations

6
checked on Sep 19, 2018

Page view(s)

60
checked on Jul 6, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.