Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1421565
Title: X-ray photoemission spectroscopy study of silicidation of Ti on BF2 +-implanted polysilicon
Authors: Chua, H.N.
Pey, K.L. 
Lai, W.H.
Chai, J.W.
Pan, J.S.
Chua, D.H.C.
Siah, S.Y.
Issue Date: Nov-2001
Citation: Chua, H.N., Pey, K.L., Lai, W.H., Chai, J.W., Pan, J.S., Chua, D.H.C., Siah, S.Y. (2001-11). X-ray photoemission spectroscopy study of silicidation of Ti on BF2 +-implanted polysilicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 19 (6) : 2252-2257. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1421565
Abstract: Fluorine reactions between Ti and Si at the interface during Ti silicidation at temperatures ranging from 500 to 700 °C were studied. The types of fluorosilyl moieties formed during this interaction were identified. The binding energy shifts observed in the F 1s XPS spectra during silicidation may result from Ti-F, Si-F, and Si-F-O bond formation. A further increase in the annealing temperature beyond 550°C led to significant out-diffusion of fluorine containing species from the reaction layer.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/83281
ISSN: 10711023
DOI: 10.1116/1.1421565
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