Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2006.878017
Title: Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications
Authors: Ren, C.
Chan, D.S.H. 
Li, M.-F. 
Loh, W.-Y.
Balakumar, S.
Tung, C.H.
Balasubramanian, N.
Kwong, D.-L.
Keywords: Lanthanide
Metal gate electrode
Metal nitride (MNx)
NMOS
Work function
Issue Date: Aug-2006
Citation: Ren, C., Chan, D.S.H., Li, M.-F., Loh, W.-Y., Balakumar, S., Tung, C.H., Balasubramanian, N., Kwong, D.-L. (2006-08). Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applications. IEEE Transactions on Electron Devices 53 (8) : 1877-1884. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.878017
Abstract: A versatile method to tune the work function ΦM of metal nitride (MNx metal gates by incorporating lanthanide elements for the applications in NMOS devices is demonstrated. By incorporating lanthanide elements such as terbium (Tb), erbium (Er), or ytterbium (Yb) into MNx metal gates such as TaN and HfN, the work function of these MNx can be tuned continuously down to 4.2-4.3 eV even after rapid thermal annealing up to 1000 °C, owing to the very low ΦM values of lanthanide elements. Material and electrical properties of lanthanide-MNx are investigated, and the results indicate that N concentration is an important parameter for the resistivity, work function, and thermal stability of lanthanide-MNx metal gates. Therefore, it needs to be carefully optimized in the process. In addition, transistor characteristics with Ta0.9MTb0.1SiO2 are also demonstrated, and several issues regarding the process integration of these novel materials are discussed. © 2006 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83279
ISSN: 00189383
DOI: 10.1109/TED.2006.878017
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