Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.121
Title: Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film
Authors: Balasubramanian, M.
Bera, L.K. 
Mathew, S.
Balasubramanian, N. 
Lim, V.
Joo, M.S. 
Cho, B.J. 
Keywords: Gate dielectrics
HfO2
High-K
Wet etching
Issue Date: Sep-2004
Citation: Balasubramanian, M., Bera, L.K., Mathew, S., Balasubramanian, N., Lim, V., Joo, M.S., Cho, B.J. (2004-09). Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film. Thin Solid Films 462-463 (SPEC. ISS.) : 101-105. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.121
Abstract: In this work, we have investigated the wet etching of MOCVD grown HfO 2 film using diluted HF. The effect of various implant species on the etch rate was also extensively studied. Etch depth profile for as-deposited film shows that etch rate is higher at the surface and near the interface compared to its bulk. A ∼ 15 Å interfacial layer is unable to etch completely. The etch rate for annealed samples, prior to implant, is negligible due to crystallization. BF2, and As implanted samples after RTA show enhanced etching in DHF. The etch rate of As implanted samples are faster than BF2. However, B and P implanted samples shows negligible etch rate. Effect of implant species on surface roughness is not substantial. All samples show a RMS surface roughness (2-3 Å) after RTA. Etched samples show large surface roughness (max: 26 Å). © 2004 Published by Elsevier B.V.
Source Title: Thin Solid Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83265
ISSN: 00406090
DOI: 10.1016/j.tsf.2004.05.121
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